onsemi QFET Type N-Channel Power MOSFET, 30 A, 60 V Enhancement, 3-Pin TO-220AB FQP30N06
- RS stock no.:
- 124-1756
- Mfr. Part No.:
- FQP30N06
- Manufacturer:
- onsemi
Unavailable
RS will no longer stock this product.
- RS stock no.:
- 124-1756
- Mfr. Part No.:
- FQP30N06
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220AB | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 79W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.1mm | |
| Height | 9.4mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220AB | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 79W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 10.1mm | ||
Height 9.4mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi QFET N-Channel MOSFET 60 V, 3-Pin TO-220AB FQP30N06
- onsemi QFET Type N-Channel MOSFET 300 V Enhancement, 3-Pin TO-220AB FQP22N30
- onsemi QFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 FQP13N06L
- onsemi QFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-263 FQB50N06LTM
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi QFET Type P-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 FQPF47P06
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB
- Vishay IRFZ Type N-Channel Power MOSFET 60 V Enhancement, 3-Pin TO-220AB IRFZ34PBF