onsemi NDT Type P-Channel MOSFET, 2.5 A, 60 V Enhancement, 4-Pin SOT-223
- RS stock no.:
- 124-1725
- Mfr. Part No.:
- NDT2955
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 4000 units)*
R 19 300,00
(exc. VAT)
R 22 196,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Limited stock
- 76,000 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 8000 | R 4.825 | R 19,300.00 |
| 12000 + | R 4.704 | R 18,816.00 |
*price indicative
- RS stock no.:
- 124-1725
- Mfr. Part No.:
- NDT2955
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-223 | |
| Series | NDT | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 300mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 3W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Width | 3.56 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Distrelec Product Id | 304-65-550 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-223 | ||
Series NDT | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 300mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 3W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Width 3.56 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Distrelec Product Id 304-65-550 | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Related links
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NDT2955
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-223 NTF2955T1G
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NDT452AP
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-223 NVF6P02T3G
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NDT456P
- onsemi P-Channel MOSFET 30 V, 3-Pin SOT-223 NTF5P03T3G
- onsemi P-Channel MOSFET 20 V, 3-Pin SOT-223 NTF6P02T3G
- onsemi P-Channel MOSFET 60 V, 3-Pin SOT-23 NDS0610
