DiodesZetex ZXMN10A25G Type N-Channel MOSFET, 4 A, 100 V Enhancement, 4-Pin SOT-223
- RS stock no.:
- 122-0609
- Mfr. Part No.:
- ZXMN10A25GTA
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 1000 units)*
R 11 121,00
(exc. VAT)
R 12 789,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 - 1000 | R 11.121 | R 11,121.00 |
| 2000 - 3000 | R 10.843 | R 10,843.00 |
| 4000 - 9000 | R 10.518 | R 10,518.00 |
| 10000 - 19000 | R 10.097 | R 10,097.00 |
| 20000 + | R 9.693 | R 9,693.00 |
*price indicative
- RS stock no.:
- 122-0609
- Mfr. Part No.:
- ZXMN10A25GTA
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | ZXMN10A25G | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 3.9W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7 mm | |
| Height | 1.8mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series ZXMN10A25G | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 3.9W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7 mm | ||
Height 1.8mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
N-Channel MOSFET, 100V to 950V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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