STMicroelectronics STripFET F7 N-Channel MOSFET, 200 A, 40 V, 6 + Tab-Pin H2PAK STH410N4F7-6AG
- RS stock no.:
- 111-6467
- Mfr. Part No.:
- STH410N4F7-6AG
- Manufacturer:
- STMicroelectronics
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Subtotal (1 pack of 2 units)*
R 86,98
(exc. VAT)
R 100,02
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 43.49 | R 86.98 |
| 10 - 98 | R 42.62 | R 85.24 |
| 100 - 498 | R 41.34 | R 82.68 |
| 500 - 998 | R 39.685 | R 79.37 |
| 1000 + | R 38.10 | R 76.20 |
*price indicative
- RS stock no.:
- 111-6467
- Mfr. Part No.:
- STH410N4F7-6AG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 200 A | |
| Maximum Drain Source Voltage | 40 V | |
| Series | STripFET F7 | |
| Package Type | H2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 + Tab | |
| Maximum Drain Source Resistance | 1.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 365 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 8.9mm | |
| Transistor Material | Si | |
| Width | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 141 nC @ 10 V | |
| Forward Diode Voltage | 1.3V | |
| Height | 4.8mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 200 A | ||
Maximum Drain Source Voltage 40 V | ||
Series STripFET F7 | ||
Package Type H2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 6 + Tab | ||
Maximum Drain Source Resistance 1.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 365 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 8.9mm | ||
Transistor Material Si | ||
Width 10.4mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 141 nC @ 10 V | ||
Forward Diode Voltage 1.3V | ||
Height 4.8mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics