N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon IPD220N06L3GBTMA1

RS stock no.:: 110-7435
Mfr. Part No.:: IPD220N06L3GBTMA1
Manufacturer:: Infineon

N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon IPD220N06L3GBTMA1

Image representative of range

999999 In stock in South Africa for delivery next working day in national main centres. (Delivery T&C's apply)

Price (Excl VAT) Each (In a Pack of 50)

R 15,991

(exc. VAT)

R 18,39

(inc. VAT)

Units	Per unit	Per Pack*
50 - 50	R 15,991	R 799,55
100 - 450	R 15,591	R 779,55
500 - 950	R 15,123	R 756,15
1000 - 2450	R 14,518	R 725,90
2500 +	R 13,937	R 696,85

*price indicative

RS stock no.:: 110-7435
Mfr. Part No.:: IPD220N06L3GBTMA1
Manufacturer:: Infineon

IPD220N06L3 G OptiMOS-3 Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	60 V
Package Type	DPAK (TO-252)
Series	OptiMOS™ 3
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	39.8 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.2V
Minimum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	36 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	6.22mm
Typical Gate Charge @ Vgs	7 nC @ 4.5 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Forward Diode Voltage	1.2V
Height	2.41mm

N-Channel MOSFET, 30 A, 60 V, 3-Pin DPAK Infineon IPD220N06L3GBTMA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V