ROHM RD3 Type P-Channel Single MOSFETs, 29 A, 60 V Enhancement, 3-Pin TO-252 RD3L03BBJHRBTL
- RS stock no.:
- 646-543
- Mfr. Part No.:
- RD3L03BBJHRBTL
- Manufacturer:
- ROHM
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 10 units)*
R 136,64
(exc. VAT)
R 157,14
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 90 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 10 - 90 | R 13.664 | R 136.64 |
| 100 - 490 | R 13.322 | R 133.22 |
| 500 - 990 | R 12.922 | R 129.22 |
| 1000 + | R 12.405 | R 124.05 |
*price indicative
- RS stock no.:
- 646-543
- Mfr. Part No.:
- RD3L03BBJHRBTL
- Manufacturer:
- ROHM
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 29A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 | |
| Series | RD3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 53W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Height | 2.3mm | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 29A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 | ||
Series RD3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 53W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Maximum Gate Source Voltage Vgs 5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Height 2.3mm | ||
Length 10.5mm | ||
Width 6.8mm | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel 60 volt 29 ampere power metal oxide semiconductor field effect transistor features lead free plating and is restriction of hazardous substances compliant. It is one hundred percent avalanche tested.
Low on-resistance
AEC-Q101 qualified
Related links
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3L04BBLHRBTL
- ROHM RD3 Type P-Channel MOSFET 40 V Enhancement, 3-Pin TO-252 RD3G08BBJHRBTL
- ROHM RD3 Type N-Channel Single MOSFETs 3-Pin TO-252 RD3P04BBKHRBTL
- ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L08BBJHRBTL
- ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs 3-Pin TO-252 (TL) RD3L04BBJHRBTL
- ROHM RD3 Type P-Channel MOSFET 100 V, 3-Pin TO-252
- ROHM RD3 Type P-Channel MOSFET 100 V, 3-Pin TO-252 RD3P130SPFRATL
- ROHM RD3 Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252 RD3L04BBKHRBTL