Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 500 V Depletion Mode, 3-Pin TO-252 (D-PAK-3) DN3145N8-G

View all MOSFETs

Subtotal (1 reel of 2000 units)*

R 33 890,00

(exc. VAT)

R 38 974,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 02 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
2000 +R 16.945R 33,890.00

*price indicative

RS stock no.:
598-898
Mfr. Part No.:
DN3145N8-G
Manufacturer:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel DMOS FET

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

500V

Package Type

TO-252 (D-PAK-3)

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

10Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Height

2.29mm

Width

3 mm

Length

4.4mm

Standards/Approvals

ISO/TS‑16949, RoHS

Automotive Standard

No

The Microchip Depletion-mode transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Related links