Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

View all MOSFETs

Subtotal (1 reel of 3000 units)*

R 28 011,00

(exc. VAT)

R 32 214,00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Reel*
3000 +R 9.337R 28,011.00

*price indicative

RS stock no.:
598-471
Mfr. Part No.:
TP5322K1-G
Manufacturer:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Product Type

Single MOSFETs

Channel Type

N-Channel Vertical DMOS FET

Maximum Continuous Drain Current Id

450mA

Maximum Drain Source Voltage Vds

40V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Height

5.3mm

Length

4.2mm

Width

4.2 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip P channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.

High input impedance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Related links