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N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN Toshiba 2SK3878(F)

RS stock no.:
415-354P
Mfr. Part No.:
2SK3878(F)
Manufacturer:
Toshiba
Toshiba
View all MOSFETs
40 Available from UK/Europe in 4–6 working days (Covid-19 flight delays could impact quoted delivery times) for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
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units

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Added

Price (Excl VAT) Each (Supplied in a Tube)

R 53.01

(exc. VAT)

R 60.96

(inc. VAT)

unitsPer unit
10 - 38R 53.01
40 - 98R 51.42
100 - 198R 49.365
200 +R 47.39
Packaging Options:
RS stock no.:
415-354P
Mfr. Part No.:
2SK3878(F)
Manufacturer:
Toshiba

Technical data sheets


Legislation and Compliance


Product Details

MOSFET N-Channel, 2SK Series, Toshiba



Specification

AttributeValue
Channel TypeN
Maximum Continuous Drain Current9 A
Maximum Drain Source Voltage900 V
Package TypeTO-3PN
Mounting TypeThrough Hole
Pin Count3
Maximum Drain Source Resistance1.3 Ω
Channel ModeEnhancement
Maximum Gate Threshold Voltage4V
Maximum Power Dissipation150 W
Transistor ConfigurationSingle
Maximum Gate Source Voltage-30 V, +30 V
Number of Elements per Chip1
Typical Gate Charge @ Vgs60 nC @ 10 V
Width4.8mm
Maximum Operating Temperature+150 °C
Transistor MaterialSi
Length15.9mm
Minimum Operating Temperature-55 °C
Series2SK
Height19mm
40 Available from UK/Europe in 4–6 working days (Covid-19 flight delays could impact quoted delivery times) for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)
Add to Basket
units

Not Available for premium delivery

Added

Price (Excl VAT) Each (Supplied in a Tube)

R 53.01

(exc. VAT)

R 60.96

(inc. VAT)

unitsPer unit
10 - 38R 53.01
40 - 98R 51.42
100 - 198R 49.365
200 +R 47.39
Packaging Options: