Infineon IGT65 Type N-Channel MOSFET, 38 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- RS stock no.:
- 351-968
- Mfr. Part No.:
- IGT65R045D2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 194,51
(exc. VAT)
R 223,69
(inc. VAT)
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- Shipping from 11 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 194.51 |
| 10 - 99 | R 189.65 |
| 100 - 499 | R 183.96 |
| 500 - 999 | R 176.60 |
| 1000 + | R 169.54 |
*price indicative
- RS stock no.:
- 351-968
- Mfr. Part No.:
- IGT65R045D2ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IGT65 | |
| Package Type | PG-HSOF-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 131W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IGT65 | ||
Package Type PG-HSOF-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 131W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolGaN is a highly efficient gallium nitride (GaN) transistor designed for power conversion. It enables higher power density, supports reduced system BOM cost, and facilitates miniaturized form factors. Produced using wafer technology and fully automated production lines, it features narrow production tolerances and the highest product quality. This makes it suitable for a wide range of applications, from consumer electronics to industrial applications.
Enhancement mode transistor
Ultra fast switching
No reverse recovery charge
Capable of reverse conduction
Low gate and output charge
Superior commutation ruggedness
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