Infineon IMBG65 Type N-Channel MOSFET, 58 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R033M2H

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R 217,78

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R 250,45

(inc. VAT)

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100 - 499R 205.97
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1000 +R 189.82

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RS stock no.:
351-961
Mfr. Part No.:
IMBG65R033M2H
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

650V

Output Power

227W

Series

IMBG65

Package Type

PG-TO263-7

Mount Type

Surface

Pin Count

7

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.45 mm

Height

4.5mm

Length

10.2mm

Standards/Approvals

JEDEC

Automotive Standard

No

The Infineon CoolSiC MOSFET G2 in a D2PAK-7 package builds on the strengths of Generation 1 technology and enables the accelerated system design of more cost optimized, efficient, compact, and reliable solutions. Generation 2 comes with significant improvements in key figures-of-merit for both, hard-switching operation and soft-switching topologies, suitable for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Enables BOM savings

Highest reliability

Enables top efficiency and power density

Ease of use

Full compatibility with existing vendors

Allows designs without fan or heatsink

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