Infineon IPDQ60 Type N-Channel MOSFET, 174 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T010S7XTMA1
- RS stock no.:
- 351-942
- Mfr. Part No.:
- IPDQ60T010S7XTMA1
- Manufacturer:
- Infineon
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R 603,33
(exc. VAT)
R 693,83
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | R 603.33 |
| 10 - 99 | R 588.25 |
| 100 + | R 570.60 |
*price indicative
- RS stock no.:
- 351-942
- Mfr. Part No.:
- IPDQ60T010S7XTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 174A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPDQ60 | |
| Package Type | PG-HDSOP-22 | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 318nC | |
| Maximum Power Dissipation Pd | 694W | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.1mm | |
| Standards/Approvals | JEDEC | |
| Width | 15.5 mm | |
| Height | 2.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 174A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPDQ60 | ||
Package Type PG-HDSOP-22 | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 318nC | ||
Maximum Power Dissipation Pd 694W | ||
Maximum Operating Temperature 150°C | ||
Length 15.1mm | ||
Standards/Approvals JEDEC | ||
Width 15.5 mm | ||
Height 2.35mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS S7T with embedded temperature sensor increases junction temperature sensing accuracy and robustness while enabling easy implementation. The device is optimized for low-frequency and high-current switching applications. It is an ideal fit for solid-state relay, circuit breaker designs, and line rectification in SMPS.
Minimized conduction losses
Increased system performances
Allow more compact design over EMR
Lower TCO over prolonged time
Enabling higher power density designs
Reduction of external sensing elements
Best utilization of power transistor
Related links
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