Infineon IPT0 Type N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1
- RS stock no.:
- 351-908
- Mfr. Part No.:
- IPT023N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 170,96
(exc. VAT)
R 196,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,000 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | R 85.48 | R 170.96 |
| 20 - 198 | R 83.345 | R 166.69 |
| 200 - 998 | R 80.845 | R 161.69 |
| 1000 - 1998 | R 77.61 | R 155.22 |
| 2000 + | R 74.505 | R 149.01 |
*price indicative
- RS stock no.:
- 351-908
- Mfr. Part No.:
- IPT023N10NM5LF2ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 243A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.58mm | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Height | 2.40mm | |
| Width | 10.1 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 243A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-HSOF-8 | ||
Series IPT0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.58mm | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Height 2.40mm | ||
Width 10.1 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
Related links
- Infineon IPT0 Type N-Channel MOSFET 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT Type N-Channel Power MOSFET 0.82 V Enhancement, 8-Pin PG-HSOF-8
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN06S5N008ATMA1
- Infineon IPT Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8 IPT029N08N5ATMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T040S7XTMA1
- Infineon IPT Type N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60R180CM8XTMA1