Infineon CoolSiC Type N-Channel MOSFET, 48 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R050M1HXKSA1
- RS stock no.:
- 349-111
- Mfr. Part No.:
- IMYH200R050M1HXKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 823,61
(exc. VAT)
R 947,15
(inc. VAT)
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In Stock
- Plus 209 unit(s) shipping from 29 December 2025
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Units | Per unit |
|---|---|
| 1 - 9 | R 823.61 |
| 10 - 99 | R 803.02 |
| 100 + | R 778.93 |
*price indicative
- RS stock no.:
- 349-111
- Mfr. Part No.:
- IMYH200R050M1HXKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 348W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 348W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.
Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free
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