Infineon IMT Type N-Channel MOSFET, 77 A, 650 V Enhancement, 4-Pin PG-LHSOF-4 IMTA65R020M2HXTMA1
- RS stock no.:
- 349-056
- Mfr. Part No.:
- IMTA65R020M2HXTMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 unit)*
R 369,43
(exc. VAT)
R 424,84
(inc. VAT)
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- Shipping from 16 November 2027
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Units | Per unit |
|---|---|
| 1 - 9 | R 369.43 |
| 10 - 99 | R 360.19 |
| 100 + | R 349.38 |
*price indicative
- RS stock no.:
- 349-056
- Mfr. Part No.:
- IMTA65R020M2HXTMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IMT | |
| Package Type | PG-LHSOF-4 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 416W | |
| Typical Gate Charge Qg @ Vgs | 57nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IMT | ||
Package Type PG-LHSOF-4 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 416W | ||
Typical Gate Charge Qg @ Vgs 57nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and exceptional ease of use. This MOSFET enables cost effective, highly efficient, and simplified designs, making it ideal for meeting the ever-growing demands of modern power systems and markets. Its advanced technology provides a powerful solution for achieving high system efficiency in a wide range of applications.
Ultra low switching losses
Robust against parasitic turn‑on even with 0 V turn off gate voltage
Flexible driving voltage and compatible with bipolar driving scheme
Robust body diode operation under hard commutation events
The .XT interconnection technology for best in class thermal performance
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