onsemi NXH Type N-Channel MOSFET, 42 A, 1200 V Enhancement, 18-Pin PIM18 NXH030P120M3F1PTG
- RS stock no.:
- 277-056
- Mfr. Part No.:
- NXH030P120M3F1PTG
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 unit)*
R 1 984,78
(exc. VAT)
R 2 282,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 28 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | R 1,984.78 |
| 10 + | R 1,935.16 |
*price indicative
- RS stock no.:
- 277-056
- Mfr. Part No.:
- NXH030P120M3F1PTG
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 42A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PIM18 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 18 | |
| Maximum Drain Source Resistance Rds | 38.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 42A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PIM18 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 18 | ||
Maximum Drain Source Resistance Rds 38.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Power Module contains a 30 mΩ, 1200V SiC MOSFET half-bridge and a thermistor, all housed in an F1 package. This module is designed for high-efficiency power conversion and is ideal for applications such as solar inverters, uninterruptible power supplies (UPS), electric vehicle charging stations, and industrial power systems.
Press fit pins
Pb free
Halide free and RoHS compliant
Related links
- onsemi NXH Dual SiC N-Channel MOSFET 1200 V, 18-Pin PIM18 NXH010P120M3F1PTG
- onsemi NXH Dual SiC N-Channel MOSFET 1200 V, 18-Pin PIM18 NXH015P120M3F1PTG
- onsemi NXH SiC N-Channel MOSFET 1200 V, 18-Pin PIM18 NXH008P120M3F1PTG
- onsemi NXH Dual SiC N-Channel MOSFET 1200 V, 36-Pin PIM36 NXH006P120M3F2PTHG
- onsemi NXH Dual Silicon N/P-Channel MOSFET 1200 V, 11-Pin PIM11 NXH800H120L7QDSG
- onsemi NXH Hex SiC N/P-Channel MOSFET 1000 V 44-Pin PIM44 NXH600B100H4Q2F2PG
- onsemi NXH Quad SiC N-Channel MOSFET 1200 V, 29-Pin PIM29 NXH008T120M3F2PTHG
- onsemi NXH Quad SiC N-Channel MOSFET 1200 V, 22-Pin PIM22 NXH030F120M3F1PTG
