onsemi NVMFWS Type N-Channel MOSFET, 253 A, 80 V Enhancement, 5-Pin DFNW-5 NVMFWS1D5N08XT1G
- RS stock no.:
- 220-570
- Mfr. Part No.:
- NVMFWS1D5N08XT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 tape of 2 units)*
R 173,92
(exc. VAT)
R 200,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,376 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | R 86.96 | R 173.92 |
| 20 - 198 | R 84.785 | R 169.57 |
| 200 - 998 | R 82.24 | R 164.48 |
| 1000 - 1998 | R 78.95 | R 157.90 |
| 2000 + | R 75.79 | R 151.58 |
*price indicative
- RS stock no.:
- 220-570
- Mfr. Part No.:
- NVMFWS1D5N08XT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | NVMFWS | |
| Package Type | DFNW-5 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.43mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 0.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 194W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | AEC-Q101 | |
| Width | 6 mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series NVMFWS | ||
Package Type DFNW-5 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.43mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 0.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 194W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals AEC-Q101 | ||
Width 6 mm | ||
Automotive Standard AEC-Q | ||
- COO (Country of Origin):
- MY
The ON Semiconductor MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Halogen Free
RoHS Compliant
Related links
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 5-Pin DFNW-5 NVMFWS2D5N08XT1G
- onsemi NVMFWS Type N-Channel MOSFET 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D3N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D3N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS1D1N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS2D9N04XMT1G
- onsemi NVM Type N-Channel Single MOSFETs 40 V Enhancement, 5-Pin DFNW-5 NVMFWS0D63N04XMT1G
- onsemi NVMFWS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8FL NVMFWS1D9N08XT1G
- STMicroelectronics Type N-Channel MOSFET 600 V Enhancement, 5-Pin PowerFLAT