Nexperia PSM Type N-Channel MOSFET, 100 A, 30 V Enhancement, 5-Pin LFPAK PSMN3R0-30YLDX

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R 21,45

(exc. VAT)

R 24,67

(inc. VAT)

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1 - 9R 21.45
10 - 99R 20.91
100 - 499R 20.28
500 - 999R 19.47
1000 +R 18.69

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Packaging Options:
RS stock no.:
219-515
Mfr. Part No.:
PSMN3R0-30YLDX
Manufacturer:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

21.9nC

Maximum Power Dissipation Pd

91W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Qualified to 175 °C

Superfast switching with soft recovery

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