Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN4R8-100BSEJ

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Subtotal (1 tape of 1 unit)*

R 89,69

(exc. VAT)

R 103,14

(inc. VAT)

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1 - 9R 89.69
10 - 99R 87.45
100 +R 84.83

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Packaging Options:
RS stock no.:
219-429
Mfr. Part No.:
PSMN4R8-100BSEJ
Manufacturer:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

405W

Typical Gate Charge Qg @ Vgs

278nC

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

25°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

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