STMicroelectronics SuperMESH Type N-Channel MOSFET, 4 A, 600 V Enhancement, 3-Pin TO-252 STD4NK60ZT4

Image representative of range

Bulk discount available

Subtotal 200 units (supplied on a reel)*

R 1 514,20

(exc. VAT)

R 1 741,40

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 2,740 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per unit
200 - 480R 7.571
500 - 980R 7.344
1000 - 1980R 7.05
2000 +R 6.768

*price indicative

Packaging Options:
RS stock no.:
151-440P
Mfr. Part No.:
STD4NK60ZT4
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

18.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

2.39mm

Standards/Approvals

RoHS

Length

10.34mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener protected

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy