A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Attribute
Value
Channel Type
N
Idss Drain-Source Cut-off Current
6 → 13mA
Maximum Gate Source Voltage
-30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Mounting Type
Through Hole
Package Type
TO-92
Pin Count
3
Dimensions
4.58 x 3.86 x 4.58mm
Height
4.58mm
Minimum Operating Temperature
-55 °C
Length
4.58mm
Maximum Operating Temperature
+150 °C
Width
3.86mm
Cookies affect the service we can offer you
Our website uses cookies and similar technologies to provide you with a better service while browsing and placing orders, and to personalise the content you see. You can read our cookie policy for more information.
These cookies make our website work. This includes product images and videos, functionality for the basket, logging in, remembering your username, registration and My Account. In addition, we use optimisation cookies to test new features and designs on our website. The information collected helps us improve our website and our customers' experience.
These cookies are used to understand the performance and relevancy of our adverts, to provide you with personalised adverts on other websites and social media, to track when you have arrived at our site from a recognised third-party affiliate website, and to track if you made a purchase based on the adverts we displayed to you.
These cookies enable us to provide personalised product and content recommendations, to make the browsing experience more relevant to you.
These cookies are used to offer customer surveys and feedback, to improve search results, and to allow you to share content from our website on social media.
These cookies help us improve our website by collecting and reporting information on how you use it.