onsemi MMBFJ177LT1G, Single Type P-Channel JFET-Channel JFET, -25 V dc 1.5 to 20 mA, 3-Pin SOT-23
- RS stock no.:
- 773-7816P
- Mfr. Part No.:
- MMBFJ177LT1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
R 333,20
(exc. VAT)
R 383,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 3,000 unit(s) shipping from 29 April 2026
- Plus 3,000 unit(s) shipping from 10 June 2026
- Plus 6,000 unit(s) shipping from 17 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 100 - 240 | R 3.332 |
| 250 - 490 | R 3.232 |
| 500 - 990 | R 3.103 |
| 1000 + | R 2.979 |
*price indicative
- RS stock no.:
- 773-7816P
- Mfr. Part No.:
- MMBFJ177LT1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Sub Type | JFET | |
| Channel Type | Type P | |
| Product Type | JFET | |
| Maximum Drain Source Voltage Vds | -25V dc | |
| Configuration | Single | |
| Mount Type | Surface | |
| Package Type | SOT-23 | |
| Drain Source Current Ids | 1.5 to 20 mA | |
| Minimum Operating Temperature | -55°C | |
| Maximum Drain Source Resistance Rds | 300Ω | |
| Pin Count | 3 | |
| Maximum Gate Source Voltage Vgs | 25 V dc | |
| Maximum Power Dissipation Pd | 225mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Height | 1.01mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Sub Type JFET | ||
Channel Type Type P | ||
Product Type JFET | ||
Maximum Drain Source Voltage Vds -25V dc | ||
Configuration Single | ||
Mount Type Surface | ||
Package Type SOT-23 | ||
Drain Source Current Ids 1.5 to 20 mA | ||
Minimum Operating Temperature -55°C | ||
Maximum Drain Source Resistance Rds 300Ω | ||
Pin Count 3 | ||
Maximum Gate Source Voltage Vgs 25 V dc | ||
Maximum Power Dissipation Pd 225mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Height 1.01mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
P-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.