STMicroelectronics STGWT80H65DFB, Type N-Channel IGBT 650 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 829-7136P
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal 10 units (supplied in a tube)*
R 1 125,20
(exc. VAT)
R 1 294,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
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- Shipping from 24 July 2026
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Units | Per unit |
|---|---|
| 10 - 49 | R 112.52 |
| 50 - 149 | R 109.14 |
| 150 - 499 | R 104.77 |
| 500 + | R 100.58 |
*price indicative
- RS stock no.:
- 829-7136P
- Mfr. Part No.:
- STGWT80H65DFB
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 469W | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | HB | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 469W | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series HB | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.