Infineon IKW15N120H3FKSA1, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

RS stock no.:: 826-8223
Mfr. Part No.:: IKW15N120H3FKSA1
Manufacturer:: Infineon

Infineon IKW15N120H3FKSA1, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

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Bulk discount available

Subtotal (1 pack of 2 units)*

R 114,22

(exc. VAT)

R 131,36

(inc. VAT)

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Units	Per unit	Per Pack*
2 - 18	R 57.11	R 114.22
20 - 48	R 55.68	R 111.36
50 - 98	R 54.01	R 108.02
100 - 238	R 51.85	R 103.70
240 +	R 49.775	R 99.55

*price indicative

RS stock no.:: 826-8223
Mfr. Part No.:: IKW15N120H3FKSA1
Manufacturer:: Infineon

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	30A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	217W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.05V
	Maximum Operating Temperature	175°C
	Series	TrenchStop
	Standards/Approvals	JEDEC, RoHS
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT
	Maximum Continuous Collector Current Ic 30A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 217W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.05V
	Maximum Operating Temperature 175°C
	Series TrenchStop
	Standards/Approvals JEDEC, RoHS
	Automotive Standard No

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 1100 to 1600V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 1100 to 1600V

• Very low VCEsat

• Low turn-off losses

• Short tail current

• Low EMI

• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Infineon IKW15N120H3FKSA1, Type N-Channel IGBT, 30 A 1200 V, 3-Pin TO-247, Through Hole

Bulk pricing options

Infineon TrenchStop IGBT Transistors, 1100 to 1600V

IGBT Discretes & Modules, Infineon

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