- RS stock no.:
- 795-9198
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics
On back order for despatch 2025/04/08
Not Available for premium delivery
Added
Price (Excl VAT) Each (In a Pack of 2)
R 94,395
(exc. VAT)
R 108,554
(inc. VAT)
Units | Per unit | Per Pack* |
2 - 28 | R 94,395 | R 188,79 |
30 - 88 | R 92,035 | R 184,07 |
90 - 298 | R 89,275 | R 178,55 |
300 - 598 | R 85,705 | R 171,41 |
600 + | R 82,275 | R 164,55 |
*price indicative |
- RS stock no.:
- 795-9198
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics
Technical data sheets
Legislation and Compliance
Product Details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specification
Attribute | Value |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 200 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
- RS stock no.:
- 795-9198
- Mfr. Part No.:
- STGW30NC60WD
- Manufacturer:
- STMicroelectronics