STMicroelectronics STGW30NC60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 181,96

(exc. VAT)

R 209,26

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 28R 90.98R 181.96
30 - 88R 88.705R 177.41
90 - 298R 86.045R 172.09
300 - 598R 82.605R 165.21
600 +R 79.30R 158.60

*price indicative

Packaging Options:
RS stock no.:
795-9198
Mfr. Part No.:
STGW30NC60WD
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

60 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

200 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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