IXYS IXGH48N60B3, Type N-Channel IGBT, 48 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Manufacturer:
- IXYS
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Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 329,97
(exc. VAT)
R 379,466
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 14 unit(s) ready to ship from another location
- Plus 14 unit(s) shipping from 08 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 164.985 | R 329.97 |
| 10 - 28 | R 160.86 | R 321.72 |
| 30 - 58 | R 156.035 | R 312.07 |
| 60 - 118 | R 149.795 | R 299.59 |
| 120 + | R 143.805 | R 287.61 |
*price indicative
- RS stock no.:
- 791-7416
- Mfr. Part No.:
- IXGH48N60B3
- Manufacturer:
- IXYS
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 48A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.32mm | |
| Standards/Approvals | RoHS | |
| Series | GenX3TM 600V IGBT | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 48A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 20.32mm | ||
Standards/Approvals RoHS | ||
Series GenX3TM 600V IGBT | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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