Infineon BSC16DN25NS3GATMA1 IGBT, 8-Pin PG-TDSON-8, Through Hole

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Subtotal (1 pack of 5 units)*

R 218,36

(exc. VAT)

R 251,115

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 45R 43.672R 218.36
50 - 495R 42.58R 212.90
500 - 995R 41.302R 206.51
1000 - 2495R 39.65R 198.25
2500 +R 38.064R 190.32

*price indicative

RS stock no.:
273-5240
Mfr. Part No.:
BSC16DN25NS3GATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

62.5 W

Package Type

PG-TDSON-8

Mounting Type

Through Hole

Channel Type

N

Pin Count

8

The Infineon MOSFET is a N channel MOSFET with 150 degree Celsius operating temperature. It is an optimized for dc to dc conversion. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant
Pb free lead plating
Low on resistance
Excellent gate charge

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