Infineon BSC16DN25NS3GATMA1 IGBT, 8-Pin PG-TDSON-8, Through Hole

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 224,53

(exc. VAT)

R 258,21

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 85 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 44.906R 224.53
50 - 495R 43.784R 218.92
500 - 995R 42.47R 212.35
1000 - 2495R 40.772R 203.86
2500 +R 39.142R 195.71

*price indicative

RS stock no.:
273-5240
Mfr. Part No.:
BSC16DN25NS3GATMA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

62.5 W

Package Type

PG-TDSON-8

Mounting Type

Through Hole

Channel Type

N

Pin Count

8

The Infineon MOSFET is a N channel MOSFET with 150 degree Celsius operating temperature. It is an optimized for dc to dc conversion. This MOSFET is qualified according to JEDEC for target applications. This MOSFET is halogen free according to IEC61249 2 21 standard.

RoHS compliant
Pb free lead plating
Low on resistance
Excellent gate charge

Related links