STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- RS stock no.:
- 261-5072P
- Mfr. Part No.:
- STGWA80H65DFBAG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal 5 units (supplied in a tube)*
R 548,05
(exc. VAT)
R 630,25
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 22 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 - 9 | R 109.61 |
| 10 - 14 | R 106.32 |
| 15 - 19 | R 102.07 |
| 20 + | R 97.99 |
*price indicative
- RS stock no.:
- 261-5072P
- Mfr. Part No.:
- STGWA80H65DFBAG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | STGWA | |
| Height | 5mm | |
| Length | 15.8mm | |
| Width | 21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series STGWA | ||
Height 5mm | ||
Length 15.8mm | ||
Width 21 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode