Infineon FF300R12KT4HOSA1 IGBT Module, 450 A 1200 V
- RS stock no.:
- 244-5825
- Mfr. Part No.:
- FF300R12KT4HOSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 2 936,04
(exc. VAT)
R 3 376,45
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 15 July 2026
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Units | Per unit |
|---|---|
| 1 - 1 | R 2,936.04 |
| 2 - 2 | R 2,862.64 |
| 3 - 3 | R 2,776.76 |
| 4 - 4 | R 2,665.69 |
| 5 + | R 2,559.06 |
*price indicative
- RS stock no.:
- 244-5825
- Mfr. Part No.:
- FF300R12KT4HOSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 450A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1600W | |
| Number of Transistors | 2 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | FF | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 450A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1600W | ||
Number of Transistors 2 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series FF | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 1600 W, maximum gate threshold voltage is 6.4 V.
Internal isolation basic insulation (class 1, IEC 61140)
Gate-emitter peak voltage + /- 20 V
Collector-emitter saturation voltage 2.15 V
Gate-emitter leakage current 400 nA
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