onsemi FGHL50T65MQDT IGBT 650 V, 3-Pin TO-247-3L, Surface
- RS stock no.:
- 241-0732
- Mfr. Part No.:
- FGHL50T65MQDT
- Manufacturer:
- onsemi
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Subtotal (1 unit)*
R 86,01
(exc. VAT)
R 98,91
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 322 unit(s) shipping from 16 March 2026
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Units | Per unit |
|---|---|
| 1 - 9 | R 86.01 |
| 10 - 24 | R 83.86 |
| 25 - 49 | R 81.34 |
| 50 - 99 | R 78.09 |
| 100 + | R 74.97 |
*price indicative
- RS stock no.:
- 241-0732
- Mfr. Part No.:
- FGHL50T65MQDT
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 268W | |
| Package Type | TO-247-3L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Series | FGHL50T65MQDT | |
| Height | 4.82mm | |
| Standards/Approvals | RoHS | |
| Width | 20.82 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 268W | ||
Package Type TO-247-3L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Series FGHL50T65MQDT | ||
Height 4.82mm | ||
Standards/Approvals RoHS | ||
Width 20.82 mm | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 50 A FS4 medium switching speed IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low switching losses
Low conduction losses
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