Infineon IKN03N60RC2ATMA1 IGBT, 5.7 A 600 V PG-SOT223-3
- RS stock no.:
- 240-8528
- Mfr. Part No.:
- IKN03N60RC2ATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
R 64,50
(exc. VAT)
R 74,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- 2,980 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 12.90 | R 64.50 |
| 10 - 95 | R 12.578 | R 62.89 |
| 100 - 245 | R 12.20 | R 61.00 |
| 250 - 495 | R 11.712 | R 58.56 |
| 500 + | R 11.244 | R 56.22 |
*price indicative
- RS stock no.:
- 240-8528
- Mfr. Part No.:
- IKN03N60RC2ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 5.7 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Maximum Power Dissipation | 6.3 W | |
| Number of Transistors | 1 | |
| Package Type | PG-SOT223-3 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 5.7 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Maximum Power Dissipation 6.3 W | ||
Number of Transistors 1 | ||
Package Type PG-SOT223-3 | ||
The Infineon RC Drives 2 600 V, 1 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF. It provides low switching loses on competitive price and is asy to design in products – drop in SMD replacement in DPAK and SOT-223 with high system reliability.
Improved controllability
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
Operating range of 1 to 20 kHz
Humidity robust design
Maximum junction temperature 150°C
Short circuit capability of 3 μs
Very tight parameter distribution
Pb free lead plating, RoHs compliant
Complete product spectrum and SPICE models
Related links
- Infineon IKN03N60RC2ATMA1 IGBT, 5.7 A 600 V PG-SOT223-3
- Infineon IKN01N60RC2ATMA1 IGBT, 2.2 A 600 V PG-SOT223-3
- Infineon IKN04N60RC2ATMA1 IGBT, 7.5 A 600 V PG-SOT223-3
- Infineon IKN06N60RC2ATMA1 IGBT, 8 A 600 V PG-SOT223-3
- Infineon IKN01N60RC2ATMA1 Single IGBT 3-Pin PG-SOT223-3, Surface Mount
- MagnaChip N-Channel MOSFET 600 V, 3-Pin TO-220F MMF60R750PTH
- Infineon IPN Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-SOT223
- Infineon IKD10N60RFATMA1 IGBT 600 V PG-TO252-3