Infineon IHW25N120E1XKSA1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 218-4394
- Mfr. Part No.:
- IHW25N120E1XKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 5 units)*
R 287,46
(exc. VAT)
R 330,58
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- 15 left, ready to ship from another location
- Final 60 unit(s) shipping from 17 April 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | R 57.492 | R 287.46 |
| 10 - 95 | R 56.054 | R 280.27 |
| 100 - 245 | R 54.372 | R 271.86 |
| 250 - 495 | R 52.198 | R 260.99 |
| 500 + | R 50.11 | R 250.55 |
*price indicative
- RS stock no.:
- 218-4394
- Mfr. Part No.:
- IHW25N120E1XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 231W | |
| Number of Transistors | 1 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±25 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | JEDEC | |
| Length | 21.1mm | |
| Series | Resonant Soft-Switching | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 231W | ||
Number of Transistors 1 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±25 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals JEDEC | ||
Length 21.1mm | ||
Series Resonant Soft-Switching | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IHW series reverse conducting IGBT 1200 V, 25 A with monolithically integrated diode in a TO-247 package focusing on system efficiency and reliability for the demanding requirements of induction cooking. It has collector emitter voltage of 1200 V and 25 A of collector current.
Easy parallel switching capability due to positive temperature coefficient
Optimized for performance with switching frequencies from 18kHz–40kHz
Low losses help designs meet energy efficiency standards
Drop-in replacement for existing designs
Soft switching for good EMI behaviour
Related links
- Infineon IHW25N120E1XKSA1 IGBT 3-Pin TO-247
- Infineon IKW25N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IGW25N120H3FKSA1 25 A 1200 V Through Hole
- Infineon 25 A 1200 V Through Hole
- Starpower DG25X12T2 Single IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW40N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole
- Infineon IKW08N120CS7XKSA1 Single IGBT 3-Pin TO-247-3, Through Hole