STMicroelectronics, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

Image representative of range

View all IGBTs
Bulk discount available

Subtotal (1 tube of 50 units)*

R 1 234,35

(exc. VAT)

R 1 419,50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 23 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
50 - 50R 24.687R 1,234.35
100 - 200R 24.07R 1,203.50
250 - 450R 23.348R 1,167.40
500 - 950R 22.414R 1,120.70
1000 +R 21.517R 1,075.85

*price indicative

RS stock no.:
204-9871
Mfr. Part No.:
STGF20H65DFB2
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current Ic

40A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

45W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Series

STG

Length

10.4mm

Height

4.6mm

Width

16.4 mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Related links