STMicroelectronics STGF20H65DFB2 IGBT, 40 A 650 V, 3-Pin TO-220FP

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Subtotal (1 tube of 50 units)*

R 1 287,85

(exc. VAT)

R 1 481,05

(inc. VAT)

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  • Shipping from 14 May 2026
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Units
Per unit
Per Tube*
50 - 50R 25.757R 1,287.85
100 - 200R 25.113R 1,255.65
250 - 450R 24.359R 1,217.95
500 - 950R 23.385R 1,169.25
1000 +R 22.449R 1,122.45

*price indicative

RS stock no.:
204-9871
Mfr. Part No.:
STGF20H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

40 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

45 W

Package Type

TO-220FP

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

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