STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)
- RS stock no.:
- 204-9868P
- Mfr. Part No.:
- STGB30H65DFB2
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
R 2 351,10
(exc. VAT)
R 2 703,75
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 10 July 2026
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Units | Per unit |
|---|---|
| 50 - 95 | R 47.022 |
| 100 - 245 | R 45.612 |
| 250 - 495 | R 43.788 |
| 500 + | R 42.036 |
*price indicative
- RS stock no.:
- 204-9868P
- Mfr. Part No.:
- STGB30H65DFB2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 167 W | |
| Package Type | D2PAK (TO-263) | |
| Pin Count | 3 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 167 W | ||
Package Type D2PAK (TO-263) | ||
Pin Count 3 | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution