STMicroelectronics GH50H65DRB2-7AG IGBT, 108 A 650 V, 7-Pin H2PAK-7, Surface Mount

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R 58,22

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R 66,95

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1 - 9R 58.22
10 - 99R 56.76
100 - 499R 55.06
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1000 +R 50.75

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Packaging Options:
RS stock no.:
330-362
Mfr. Part No.:
GH50H65DRB2-7AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

108 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

385 W

Number of Transistors

1

Package Type

H2PAK-7

Mounting Type

Surface Mount

Pin Count

7

COO (Country of Origin):
CN
The STMicroelectronics newest IGBT 650 HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

AEC-Q101 qualified
Maximum junction temperature TJ equal to 175 °C
High speed switching series
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Co-packed with high ruggedness rectifier diode
Excellent switching performance thanks to the extra driving kelvin pin

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