STMicroelectronics STDRIVEG210Q 2, 1250 μA 18-Pin 6.6 V, QFN-18L

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R 36,69

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R 42,19

(inc. VAT)

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1 - 9R 36.69
10 - 24R 35.77
25 - 99R 34.70
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500 +R 31.98

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RS stock no.:
648-110
Mfr. Part No.:
STDRIVEG210Q
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

Gate Driver

Output Current

1250μA

Pin Count

18

Fall Time

11ns

Package Type

QFN-18L

Rise Time

22ns

Minimum Supply Voltage

6.6V

Number of Drivers

2

Maximum Supply Voltage

6.6V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

5mm

Width

4 mm

Standards/Approvals

ANSI/ESDA/JEDEC JS-001-2017: 2kV, ANSI/ESDA/JEDEC JS-002-2018: 1kV

Series

STDRIVEG210

Height

1mm

Automotive Standard

No

COO (Country of Origin):
TH
The STMicroelectronics Half-bridge gate driver optimized for N‑channel Enhancement Mode GaN transistors, supporting up to 220 V operation via an integrated bootstrap diode. It delivers high-speed switching with minimal propagation delay, matched timing, and robust current drive due to integrated LDOs. Designed for both soft and hard switching modes, it features rapid wake-up, interlock protection, and tailored UVLOs to enhance efficiency during burst operations.

Separated logic inputs and shutdown pin

Fault pin for over temperature and UVLO reporting

Stand by function for low consumption mode

RoHS compliant

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