Microchip 64Mbit SPI Flash Memory 8-Pin SOIJ, SST26VF064B-104I/SM

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Subtotal (1 pack of 2 units)*

R 110,53

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R 127,11

(inc. VAT)

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Per Pack*
2 - 8R 55.265R 110.53
10 - 18R 53.885R 107.77
20 - 98R 52.27R 104.54
100 +R 50.18R 100.36

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Packaging Options:
RS stock no.:
869-6179
Mfr. Part No.:
SST26VF064B-104I/SM
Manufacturer:
Microchip
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Brand

Microchip

Memory Size

64Mbit

Interface Type

SPI

Package Type

SOIJ

Pin Count

8

Organisation

8M x 8 bit

Mounting Type

Surface Mount

Cell Type

Split Gate

Minimum Operating Supply Voltage

2.7 V

Maximum Operating Supply Voltage

3.6 V

Block Organisation

Symmetrical

Length

5.26mm

Height

1.98mm

Width

5.25mm

Dimensions

5.26 x 5.25 x 1.98mm

Maximum Operating Temperature

+85 °C

Maximum Random Access Time

3ns

Number of Bits per Word

8bit

Minimum Operating Temperature

-40 °C

Number of Words

8M

Series

SST26

Automotive Standard

AEC-Q100

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory


The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) Interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O Interface that allow for low power, high performance operation in a Compact low pin-count package. The use of Microchip’s SQI™ Interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol.

Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and Block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms.

Features


Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure

x1/x2/x4 Serial Peripheral Interface (SPI) Protocol

High Speed Clock Frequency- 104 MHz Max

Burst Modes

Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical)

Fast Erase Time - Sector/Block Erase: 18 MS (Typical); Chip Erase 35 MS (Typical)

Flexible Erase Capability

Software Write Protection

Flash Memory, Microchip


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