STMicroelectronics M24M01-DFCS6TP/K, 1 MB EEPROM, 500 ns 8-Pin WLCSP Serial-I2C

Image representative of range

Bulk discount available

Subtotal (1 pack of 5 units)*

R 168,70

(exc. VAT)

R 194,00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,765 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 33.74R 168.70
50 - 95R 32.896R 164.48
100 - 245R 31.91R 159.55
250 - 995R 30.634R 153.17
1000 +R 29.408R 147.04

*price indicative

Packaging Options:
RS stock no.:
190-7593
Mfr. Part No.:
M24M01-DFCS6TP/K
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Memory Size

1MB

Product Type

EEPROM

Interface Type

Serial-I2C

Package Type

WLCSP

Mount Type

Surface

Pin Count

8

Maximum Clock Frequency

1MHz

Organisation

128K x 8 bit

Minimum Supply Voltage

1.7V

Maximum Supply Voltage

5.5V

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Height

0.5mm

Standards/Approvals

RoHS 2011/65/EU

Width

1.7 mm

Series

M24M01

Length

2.6mm

Automotive Standard

AEC-Q100

Maximum Random Access Time

500ns

Number of Words

128k

Supply Current

1.5mA

Data Retention

200year

The M24M01 is a 1 Mbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 128 K x 8 bits. The M24M01-R can operate with a supply voltage from 1.8 V to 5.5 V, and the M24M01-DF can operate with a supply voltage from 1.7 V to 5.5 V, over an ambient temperature range of –40 °C / +85 °C.

Compatible with all I2C bus modes:

1 MHz

400 kHz

100 kHz

Memory array:

1 Mbit (128 Kbyte) of EEPROM

Page size: 256 byte

Additional Write lockable page

Single supply voltage and high speed:

1 MHz clock from 1.7 V to 5.5 V

Write:

Byte Write within 5 ms

Page Write within 5 ms

Operating temperature range:

from -40 °C up to +85 °C

Random and sequential Read modes

Write protect of the whole memory array

Enhanced ESD/Latch-Up protection

More than 4 million Write cycles

More than 200-years data retention

Packages

SO8

TSSOP8

WLCSP

Unsawn wafer (each die is tested)

Related links