Infineon RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343
- RS stock no.:
- 259-1442P
- Mfr. Part No.:
- BFP640H6327XTSA1
- Manufacturer:
- Infineon
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Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
R 254,85
(exc. VAT)
R 293,10
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 5,250 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 75 | R 5.097 |
| 100 - 225 | R 4.944 |
| 250 - 975 | R 4.747 |
| 1000 + | R 4.557 |
*price indicative
- RS stock no.:
- 259-1442P
- Mfr. Part No.:
- BFP640H6327XTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4.1V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Transition Frequency ft | 42GHz | |
| Maximum Power Dissipation Pd | 200mW | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Length | 2mm | |
| Series | BFP | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4.1V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Transition Frequency ft 42GHz | ||
Maximum Power Dissipation Pd 200mW | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Length 2mm | ||
Series BFP | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm