Infineon BFP181E7764HTSA1 Bipolar Transistor, 20 mA NPN, 20 V, 4-Pin SOT-143
- RS stock no.:
- 258-7682
- Mfr. Part No.:
- BFP181E7764HTSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 71,05
(exc. VAT)
R 81,70
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 25 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 2.842 | R 71.05 |
| 50 - 75 | R 2.771 | R 69.28 |
| 100 - 225 | R 2.688 | R 67.20 |
| 250 - 975 | R 2.58 | R 64.50 |
| 1000 + | R 2.477 | R 61.93 |
*price indicative
- RS stock no.:
- 258-7682
- Mfr. Part No.:
- BFP181E7764HTSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 20mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Transition Frequency ft | 8GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 175mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Series | BFP181 | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 20mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Transition Frequency ft 8GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 175mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Series BFP181 | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA. This transistor is used for amplifier and oscillator applications in RF front end and wireless communications.
Qualification report according to AEC-Q101 available
Pb free RoHS compliant package
Related links
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