Toshiba Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23

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Subtotal 1000 units (supplied on a reel)*

R 418,00

(exc. VAT)

R 481,00

(inc. VAT)

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1000 - 1000R 0.418
1500 - 2500R 0.405
3000 +R 0.389

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Packaging Options:
RS stock no.:
236-3587P
Mfr. Part No.:
TBC847B,LM(T
Manufacturer:
Toshiba
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Brand

Toshiba

Product Type

Bipolar Transistor

Maximum DC Collector Current Idc

200mA

Maximum Collector Emitter Voltage Vceo

50V

Package Type

SOT-23

Mount Type

Surface

Transistor Configuration

Single

Maximum Collector Base Voltage VCBO

60V

Maximum Power Dissipation Pd

320mW

Maximum Emitter Base Voltage VEBO

6V

Minimum DC Current Gain hFE

200

Minimum Operating Temperature

-55°C

Transistor Polarity

NPN

Pin Count

3

Maximum Operating Temperature

150°C

Series

TBC847

Standards/Approvals

No

Length

2.9mm

Height

0.95mm

Width

2.4 mm

Automotive Standard

No

The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.

Storage temperature range −55 to 150 °C