onsemi Digital Transistor, 50 V NPN 100 mA Surface SOT-563, 6-Pin
- RS stock no.:
- 186-7192
- Mfr. Part No.:
- NSBC114EDXV6T1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
Subtotal (1 reel of 4000 units)*
R 2 864,00
(exc. VAT)
R 3 292,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Last RS stock
- Final 8,000 unit(s), ready to ship from another location
Units | Per unit | Per Reel* |
|---|---|---|
| 4000 - 4000 | R 0.716 | R 2,864.00 |
| 8000 - 8000 | R 0.698 | R 2,792.00 |
| 12000 - 12000 | R 0.678 | R 2,712.00 |
| 16000 - 20000 | R 0.65 | R 2,600.00 |
| 24000 + | R 0.624 | R 2,496.00 |
*price indicative
- RS stock no.:
- 186-7192
- Mfr. Part No.:
- NSBC114EDXV6T1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-563 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Maximum Emitter Base Voltage VEBO | 10V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Minimum DC Current Gain hFE | 35 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 500mW | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-563 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Continuous Collector Current Ic 100mA | ||
Maximum Emitter Base Voltage VEBO 10V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Minimum DC Current Gain hFE 35 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 500mW | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 2.2mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Automotive Standard AEC-Q101 | ||
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
These Devices are Pb-Free, Halogen Free/BFR Free