N-Channel MOSFET, 15.4 A, 30 V, 3-Pin SOT-223 Diodes Inc DMN3032LE-13
- RS stock no.:
- 828-3196P
- Mfr. Part No.:
- DMN3032LE-13
- Manufacturer:
- DiodesZetex
Subtotal (5 reels of 20 units)**. Quantities below 150 on continuous strip
R 807 10
(exc. VAT)
R 928 20
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit |
|---|---|
| 100 - 180 | R 7,869 |
| 200 - 480 | R 7,633 |
| 500 - 980 | R 7,328 |
| 1000 + | R 7,035 |
**price indicative
- RS stock no.:
- 828-3196P
- Mfr. Part No.:
- DMN3032LE-13
- Manufacturer:
- DiodesZetex
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 11.3 nC @ 10 V | |
| Length | 6.55mm | |
| Number of Elements per Chip | 1 | |
| Width | 3.55mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.65mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 15.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 11.3 nC @ 10 V | ||
Length 6.55mm | ||
Number of Elements per Chip 1 | ||
Width 3.55mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.65mm | ||
Minimum Operating Temperature -55 °C | ||