N-Channel MOSFET, 50 A, 150 V, 3-Pin D2PAK Infineon IPB200N15N3GATMA1
- RS stock no.:
- 754-5443P
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Manufacturer:
- Infineon
Subtotal (25 reels of 2 units)**. Quantities below 150 on continuous strip
R 2 194 50
(exc. VAT)
R 2 523 50
(inc. VAT)
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Units | Per unit |
|---|---|
| 50 - 198 | R 42,795 |
| 200 - 998 | R 41,51 |
| 1000 - 1998 | R 39,85 |
| 2000 + | R 38,255 |
**price indicative
- RS stock no.:
- 754-5443P
- Mfr. Part No.:
- IPB200N15N3GATMA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 150 V | |
| Series | OptiMOS™ 3 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 20 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 9.45mm | |
| Length | 10.31mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 4.57mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Manufacturer Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 150 V | ||
Series OptiMOS™ 3 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 20 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 9.45mm | ||
Length 10.31mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Transistor Material Si | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||