P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 onsemi BSS84
- RS stock no.:
- 671-0328P
- Mfr. Part No.:
- BSS84
- Manufacturer:
- onsemi
Bulk discount available
Subtotal (5 reels of 10 units)**. Quantities below 150 on continuous strip
R 327 10
(exc. VAT)
R 376 15
(inc. VAT)
4840 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit |
---|---|
50 - 90 | R 6,378 |
100 - 240 | R 6,187 |
250 - 490 | R 5,94 |
500 + | R 5,702 |
**price indicative
- RS stock no.:
- 671-0328P
- Mfr. Part No.:
- BSS84
- Manufacturer:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Manufacturer | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 130 mA | |
Maximum Drain Source Voltage | 50 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 10 Ω | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 0.8V | |
Maximum Power Dissipation | 360 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.3mm | |
Transistor Material | Si | |
Length | 2.92mm | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 0.9 nC @ 5 V | |
Height | 0.93mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Manufacturer onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 130 mA | ||
Maximum Drain Source Voltage 50 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 10 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 360 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.3mm | ||
Transistor Material Si | ||
Length 2.92mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 0.9 nC @ 5 V | ||
Height 0.93mm | ||
Minimum Operating Temperature -55 °C | ||