Dual N-Channel MOSFET, 4 A, 8-Pin SOIC onsemi NCP81075DR2G

The NCP81075 is a high performance dual mosfet (high side and low side) gate-drive IC designed for high-voltage, high-speed, driving MOSFETs operating up to 180 V. The NCP81075 integrates a driver IC and a bootstrap diode and offers drive capability up to 4A. The high side and low side drivers are independently controlled with a matched typical propagation delay of 3.5ns. This driver is ideally suited for use in high voltage buck applications, isolated power supplies, 2 switch and active clamp forward converters. the device can also be used in solar optimizer and solar inverter applications. The part is offered in a SO8, 8 pin DFN, and 10 pin DFN package and fully specified from -40C to 140C.

Drives two N-Channel MOSFETs in High & Low Side
Integrated Bootstrap Diode for High Side Gate Drive
Bootstrap Supply Voltage Range up to 180V
4A Source, 4A Sink Output Current Capability
Drives 1nF Load with Typical Rise/Fall Times of 8ns/7 ns
Wide Supply Voltage Range 8.5V to 20V
Fast Propagation Delay Times (Typ. 20 ns)
2 ns Delay Matching (Typical)
Under-Voltage Lockout (UVLO) Protection for Drive Voltage
Operating Junction Temperature Range of -40°C to 140°C
Applications
Buck converter
isolated power supplies
Class D audio amplifier
Two switch and Active Clamp Forward Converters
Solar optimizer