N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1
- RS stock no.:
- 171-2487
- Mfr. Part No.:
- TK65G10N1
- Manufacturer:
- Toshiba
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Price (Excl VAT) Each (In a Pack of 5)
R 47,736
(exc. VAT)
R 54,896
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | R 47,736 | R 238,68 |
*price indicative
- RS stock no.:
- 171-2487
- Mfr. Part No.:
- TK65G10N1
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Exempt
- COO (Country of Origin):
- CN
Product Details
Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
Specification
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 136 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.5 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 156 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 10.27mm |
| Length | 10.35mm |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V |
| Height | 4.46mm |
| Forward Diode Voltage | 1.2V |