N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1

RS stock no.:: 171-2487
Mfr. Part No.:: TK65G10N1
Manufacturer:: Toshiba

N-Channel MOSFET, 136 A, 100 V, 3-Pin D2PAK Toshiba TK65G10N1

Discontinued product

RS stock no.:: 171-2487
Mfr. Part No.:: TK65G10N1
Manufacturer:: Toshiba

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	136 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	4.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	156 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Length	10.35mm
Maximum Operating Temperature	+150 °C
Width	10.27mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	81 nC @ 10 V
Height	4.46mm
Forward Diode Voltage	1.2V