N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK Toshiba TK55S10N1

RS stock no.:: 171-2475
Mfr. Part No.:: TK55S10N1
Manufacturer:: Toshiba

N-Channel MOSFET, 55 A, 100 V, 3-Pin DPAK Toshiba TK55S10N1

Discontinued product

RS stock no.:: 171-2475
Mfr. Part No.:: TK55S10N1
Manufacturer:: Toshiba

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	100 V
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	6.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	157 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Number of Elements per Chip	1
Width	7mm
Typical Gate Charge @ Vgs	49 nC @ 10 V
Length	6.5mm
Maximum Operating Temperature	+175 °C
Automotive Standard	AEC-Q101
Forward Diode Voltage	1.2V
Height	2.3mm