P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK Toshiba TJ15P04M3
- RS stock no.:
- 171-2473P
- Mfr. Part No.:
- TJ15P04M3
- Manufacturer:
- Toshiba
Price (Excl VAT) Each (Supplied on a Reel) Quantities below 150 on continuous strip
R 10,466
(exc. VAT)
R 12,036
(inc. VAT)
Temporarily out of stock - back order for despatch when stock is available
Units | Per unit |
|---|---|
| 100 - 240 | R 10,466 |
| 250 - 490 | R 10,152 |
| 500 - 990 | R 9,746 |
| 1000 + | R 9,356 |
- RS stock no.:
- 171-2473P
- Mfr. Part No.:
- TJ15P04M3
- Manufacturer:
- Toshiba
Technical data sheets
Legislation and Compliance
Exempt
- COO (Country of Origin):
- CN
Product Details
Low drain-source on-resistance: RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
Applications:
Motor Drivers
Power Management Switches
Low leakage current: IDSS = -10 μA (max) (VDS = -40 V)
Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
Applications:
Motor Drivers
Power Management Switches
Specification
Attribute | Value |
|---|---|
| Channel Type | P |
| Maximum Continuous Drain Current | 15 A |
| Maximum Drain Source Voltage | 40 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 48 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 29 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Width | 7.18mm |
| Length | 6.6mm |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.2V |
| Height | 2.3mm |