Skyworks Solutions Inc Si8275DBD-IM1 MOSFET Gate Driver 2, 1.8 A, 4 A, 5.5V 14-Pin, QFN

Si8275DBD-IM1 devices provide options for a VIA, VIB inputs and Dual Driver driver. The Si8275DBD-IM1, with its high performance noise immunity, eliminates the risk posed by faster switching speeds. The high noise transients generated by the faster switching does not affect signal integrity through the driver, thereby eliminating the risk of loss of modulation. The very high latch-up spec of 400 kV/μs makes Si8275DBD-IM1 devices extremely robust, preventing permanent latch-up damage, and has UVLO fault protection, a de-glitch circuit for filtering noisy inputs, and highly precise dead time (DT pin) programmability. With this feature, users can precisely control the “dead time” between the two drivers switching to optimize system efficiency and safety. The drivers operate with a wide range of 2.5 V - 5.5 V input VDD and a maximum drive supply voltage of 30 V.